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| QIQ1245001 Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Low side Chopper IGBT Module 1200V 450A IGBT / 1200V 750A Fast Diode Description: Powerex Low Side Chopper IGBT Module is designed specially for customer applications. The modules are isolated for easy mounting with other components on a common heatsink. Features: Low Drive Requirement Low VCE(sat) Super Fast Diode (3) F Series 150A 1200V Trench Gate Chips per IGBT (5) F Series 150A 1200V Chips per Diode Isolated Baseplate for Easy Heat Sinking Al2O3 DBC Ceramic Low Thermal Impedance Outline Drawing and Circuit Diagram Applications: Choppers Welding Power Supplies Dim K M P Q R S T V W X Inches 0.55 0.33 0.94 0.98 0.86 M6 0.26 Dia. 0.02 0.11 1.08 Millimeters 14.0 8.5 24.0 25.0 21.75 M6 6.5 Dia. 0.5 2.79 27.35 Dim A B C D E F G H J Inches 4.33 3.15 1.14+0.04/-0.02 3.660.01 2.440.01 0.83 0.16 0.24 0.59 Millimeters 110.0 80.0 29.0+1.0/-0.5 93.00.25 62.00.25 21.0 4.0 6.0 15.0 n Preliminary Page 1 4/22/2002 QIQ1245001 Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Low side Chopper IGBT Module 1200V 450A IGBT / 1200V 750A Fast Diode Maximum Ratings, Tj=25C unless otherwise specified Ratings Collector- Emitter Voltage (G-E Short) Gate- Emitter Voltage (C-E Short) Collector Current Peak Collector Current (Tj<= 150C) Diode Forward Current Power Dissipation Junction Temperature Storage Temperature Mounting Torque, M6 Terminal Screws Mounting Torque, M6 Mounting Screws Module Weight (Typical) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol VCES VGES IC ICM IFM Pd Tj Tstg VRMS QIQ1245001 1200 20 450 900* 750 TBD -40 to 150 -40 to 125 40 40 580 2500 Units Volts Volts Amperes Amperes Amperes Watts C C In-lb In-lb Grams Volts *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Static Electrical Characteristics, Tj=25C unless otherwise specified Characteristic Collector Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) Test Conditions VCE=VCES VGE=0V VGE=VGES VCE=0V IC=45mA, VCE=10V IC=450A, VGE=15V IC=450A, VGE=15V, Tj=125C Total Gate Charge Diode Forward Voltage QG VFM VCC=600V, IC=450A, VGS=15V IF=750A Min. 5.0 Typ. 6.0 1.8 1.9 4950 Max. 1.0 60 7.0 2.4 3.2 Units mA A Volts Volts Volts nC Volts Dynamic Electrical Characteristics, Tj=25C unless otherwise specified Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay time Rise Time Turn-off Delay Time Fall Time Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr Test Conditions VGE=0V VCE=10V f=1MHz VCC=600V IC=450A VGE1=VGE2=15V RG=1.0 IF=750A Min. Typ. 44.0 Max. 180 7.6 4.5 TBD TBD TBD TBD 250 Units nF nF nF ns ns ns ns ns C Thermal and Mechanical Characteristics, Tj=25C unless otherwise specified Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol RJC RJC RCF Test Conditions Per IGBT Per Diode Per Module Min. Typ. 0.075 0.052 0.01 Max. TBD TBD Units C/W C/W C/W Preliminary Page 2 4/22/2002 |
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